Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films

Nonstoichiometric GeSixOy glass films and many-layer structures based on them were obtained by high-vacuum electron beam vapor deposition (EBVD). Using EBVD, the GeO2, SiO, SiO2, or Ge powders co-evaporated deposited onto a cold (100 °C) p+-Si(001) substrate with resistivity ρ = 0.0016 ± 0.0001 Ohm·cm. The as-deposited samples studied Fourier-transformed infrared spectroscopy, atomic force microscopy, X-ray photoelectron Raman spectroscopy. A transparent indium–tin–oxide (ITO) contact was as top electrode, memristor metal–insulator–semiconductor (MIS) fabricated. current–voltage characteristics (I–V), well resistive switching cycles of MIS, have been studied. Reversible (memristor effect) observed for one-layer GeSi0.9O2.8, two-layer GeSi0.9O1.8/GeSi0.9O2.8 GeSi0.9O1.8/SiO, three-layer SiO2/a–Ge/GeSi0.9O2.8 MIS structures. For structure, number rewriting reached several thousand, while memory window (the ratio currents in ON OFF states) remained at 1–2 orders magnitude. Intermediate resistance states These may be promising use multi-bit memristors simulating neural networks. In took place quite smoothly, hysteresis I–V characteristics; such structure can used an “analog” memristor.